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CAS Institute of Semiconductors Demonstrates Sliding Ferroelectric Tunnel Junction With Giant TER

CAS Institute of Semiconductors reports a sliding ferroelectric tunnel junction with TER of 1.9×10^7, ns switching, fJ/bit energy, and 10^11-cycle endurance in...
CAS Institute of Semiconductors reports a sliding ferroelectric tunnel junction with TER of 1.9×10^7, ns switching, fJ/bit energy, and 10^11-cycle endurance in...
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